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| DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES * Supply voltage * Circuit current * Medium output power : VCC = 2.7 to 3.3 V : ICC = 30 mA TYP. @ VCC = 3.0 V : PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz * Power gain : GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.5 dB TYP. @ f = 1.9 GHz GP = 20.5 dB TYP. @ f = 2.4 GHz * Upper limit operating frequency : fu = 2.9 GHz TYP. @ 3 dB bandwidth * High-density surface mounting : 6-pin super minimold package (2.0 x 1.25 x 0.9 mm) APPLICAION * Buffer amplifiers on 1.9 to 2.4 GHz mobile communications system ORDERING INFORMATION Part Number Package 6-pin super minimold Marking C3F Supplying Form * Embossed tape 8 mm wide * Pin 1, 2, 3 face the perforation side of the tape * Qty 3 kpcs/reel PC8182TB-E3 Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: PC8182TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10206EJ01V0DS (1st edition) (Previous No. P14543EJ2V0DS00) Date Published December 2002 CP(K) Printed in Japan The mark * shows major revised points. (c) NEC Compound Semiconductor Devices 1999, 2002 PC8182TB PIN CONNECTIONS Pin No. (Top View) (Bottom View) 4 5 6 4 5 6 3 2 1 Pin Name INPUT GND GND OUTPUT GND VCC 1 2 3 4 5 6 3 2 1 PRODUCT LINE-UP (TA = +25C, VCC = Vout = 3.0 V, ZS = ZL = 50 ) Part No. fu (GHz) 2.9 PO (1 dB) (dBm) +9.5 @ f = 0.9 GHz +9.0 @ f = 1.9 GHz +8.0 @ f = 2.4 GHz GP (dB) 21.5 @ f = 0.9 GHz 20.5 @ f = 1.9 GHz 20.5 @ f = 2.4 GHz 13.0 @ f = 0.9 GHz 15.5 @ f = 1.9 GHz 20.0 @ f = 0.9 GHz 21.0 @ f = 1.9 GHz 21.0 @ f = 0.9 GHz 21.0 @ f = 1.5 GHz 19.0 @ f = 0.9 GHz 21.0 @ f = 1.9 GHz 22.0 @ f = 2.4 GHz 23.0 36.0 27.0 26.5 6-pin minimold 6-pin super minimold 6-pin minimold 6-pin super minimold 6-pin minimold 6-pin super minimold 6-pin super minimold C3E C2H C2A C1Z ICC (mA) 30.0 Package 6-pin super minimold Marking C3F PC8182TB PC2762T PC2762TB PC2763T PC2763TB PC2771T PC2771TB PC8181TB 2.9 C3F 2.7 2.2 4.0 +8.0 @ f = 0.9 GHz +7.0 @ f = 1.9 GHz +9.5 @ f = 0.9 GHz +6.5 @ f = 1.9 GHz +11.5 @ f = 0.9 GHz +9.5 @ f = 1.5 GHz +8.0 @ f = 0.9 GHz +7.0 @ f = 1.9 GHz +7.0 @ f = 2.4 GHz Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Caution The package size distinguishes between minimold and super minimold. 2 Data Sheet PU10206EJ01V0DS PC8182TB SYSTEM APPLICATION EXAMPLE Digital cellular telephone RX DEMOD. I Q /N SW PLL PLL I 0 TX PA : PC8182TB applicable Phase shifter 90 Q Caution The insertion point is different due to the specifications of conjunct devices. Data Sheet PU10206EJ01V0DS 3 PC8182TB PIN EXPLANATION Applied Voltage (V) - Pin Voltage Note (V) 0.99 Pin No. Pin Name Function and Applications Internal Equivalent Circuit 1 INPUT Signal input pin. A internal matching circuit, configured with resistors, enables 50 connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. Signal output pin. The inductor must be attached between VCC and output pins to supply current to the internal output transistors. 1 6 4 OUTPUT Voltage as same as VCC through external inductor VCC 2.7 to 3.3 - 4 6 - Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. 3 GND 2 5 GND 2 3 5 GND 0 - Note Pin voltage is measured at VCC = 3.0 V. 4 Data Sheet PU10206EJ01V0DS PC8182TB ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Total Circuit Current Power Dissipation Operating Ambient Temperature Storage Temperature Input Power Symbol VCC ICC PD TA Tstg Pin TA = +25C Test Conditions TA = +25C, pin 4 and pin 6 TA = +25C TA = +85C Note Ratings 3.6 60 270 -40 to +85 -55 to +150 +10 Unit V mA mW C C dBm Note Mounted on double-sided copper-clad 50 x 50 x 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol VCC MIN. 2.7 -40 TYP. 3.0 MAX. 3.3 Unit V C Remarks Same voltage should be applied to pin 4 and pin 6. - Operating Ambient Temperature TA +25 +85 Data Sheet PU10206EJ01V0DS 5 PC8182TB ELECTRICAL CHARACTERISTICS (TA = +25C, VCC = Vout = 3.0 V, ZS = ZL = 50 , unless otherwise specified) Parameter Circuit Current Power Gain Symbol ICC GP No signal f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz Noise Figure NF f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz Upper Limit Operating Frequency Isolation fu ISL 3 dB down below from gain at f = 0.1 GHz f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz Input Return Loss RLin f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz Output Return Loss RLout f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz Gain 1 dB Compression Output Power PO(1dB) f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz Saturated Output Power PO(sat) f = 0.9 GHz, Pin = -5 dBm f = 1.9 GHz, Pin = -5 dBm f = 2.4 GHz, Pin = -5 dBm Test Conditions MIN. - 19.0 18.0 18.0 - - - 2.6 28 27 26 5 7 9 7 8 11 +7.0 +6.5 +5.5 - - - TYP. 30.0 21.5 20.5 20.5 4.5 4.5 5.0 2.9 33 32 31 8 10 12 10 11 14 +9.5 +9.0 +8.0 +11.0 +10.5 +10.0 MAX. 38.0 25.0 24.0 24.0 6.0 6.0 6.5 - - - - - - - - - - - - - - - - dBm dBm dB dB GHz dB dB Unit mA dB 6 Data Sheet PU10206EJ01V0DS PC8182TB TEST CIRCUITS VCC 1 000 pF C3 6 50 IN 1 000 pF C1 1 4 L C2 1 000 pF 50 OUT 2, 3, 5 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type C1, C2 C3 L Bias Tee Capacitor Bias Tee Value 1 000 pF 1 000 pF 1 000 nH EXAMPLE OF ACTUAL APPLICATION COMPONENTS Type C1 to C3 L Chip capacitor Chip inductor Value 1 000 pF 100 nH 10 nH Operating Frequency 100 MHz or higher 100 MHz or higher 2.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the Vcc pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port-impedance higher to get enough gain. In this case, large inductance and Q is suitable. For above reason, select an inductance of 100 or over impedance in the operating frequency. The gain is a peak in the operating frequency band, and suppressed at lower frequencies. The recommendable inductance can be chosen from example of actual application components list as shown above. CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the Vcc pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the Vcc pin is used to minimize ground impedance of Vcc pin. So, stable bias can be supplied against Vcc fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2Rfc). Data Sheet PU10206EJ01V0DS 7 PC8182TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD AMP-2 Top View 3 1 IN C C OUT 2 C 3F 5 4 Mounting direction VCC C COMPONENT LIST Value C L 1 000 pF Example: 10 nH 6 Notes 1. 30 x 30 x 0.4 mm double-sided copper-clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes 8 Data Sheet PU10206EJ01V0DS L PC8182TB TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 No Signal 35 40 CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE No Signal 35 VCC = 3.0 V Circuit Current ICC (mA) Circuit Current ICC (mA) 30 25 20 15 10 5 0 0 1 2 3 4 30 25 20 15 10 5 0 -60 -40 -20 0 +20 +40 +60 +80 +100 Supply Voltage VCC (V) Operating Ambient Temperature TA (C) NOISE FIGURE, POWER GAIN vs. FREQUENCY 24 22 GP VCC = 3.0 V VCC = 2.7 V 18 16 VCC = 3.0 V 14 12 0.1 NF VCC = 2.7 V 0.3 1.0 3.0 VCC = 3.3 V 22 24 POWER GAIN vs. FREQUENCY VCC = 3.0 V TA = -40C Noise Figure NF (dB) Power Gain GP (dB) Power Gain GP (dB) 20 20 18 16 14 12 0.1 TA = +25C TA = +85C 5 4 3 VCC = 3.3 V 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) ISOLATION vs. FREQUENCY 0 VCC = 3.0 V 0 INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY VCC = 3.0 V Input Return Loss RLin (dB) Output Return Loss RLout (dB) RLin -10 -10 -20 -30 -40 -50 0.1 Isolation ISL (dB) -20 -30 -40 -50 0.1 RLout 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) Data Sheet PU10206EJ01V0DS 9 PC8182TB OUTPUT POWER vs. INPUT POWER +15 +10 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +15 f = 0.9 GHz +10 VCC = 3.0 V Output Power Pout (dBm) f = 0.9 GHz VCC = 3.3 V VCC = 2.7 V +5 0 -5 -10 -15 -20 -25 -50 -40 +5 0 -5 -10 -15 -20 TA = +25C TA = +85C TA = -40C VCC = 3.0 V -30 -20 -10 0 +10 -25 -50 -40 -30 -20 -10 0 +10 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER +15 +10 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +15 Output Power Pout (dBm) f = 1.9 GHz VCC = 3.3 V VCC = 3.0 V f = 1.9 GHz +10 VCC = 3.0 V +5 0 -5 -10 -15 -20 TA = +25C TA = -40C +5 0 -5 -10 -15 -20 -25 -50 -40 VCC = 2.7 V TA = +85C -30 -20 -10 0 +10 -25 -50 -40 -30 -20 -10 0 +10 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER +15 +10 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +15 f = 2.4 GHz +10 VCC = 3.0 V f = 2.4 GHz VCC = 3.3 V VCC = 2.7 V Output Power Pout (dBm) +5 0 -5 -10 -15 -20 -25 -50 -40 +5 0 -5 -10 -15 -20 TA = +25C TA = -40C TA = +85C VCC = 3.0 V -30 -20 -10 0 +10 -25 -50 -40 -30 -20 -10 0 +10 Input Power Pin (dBm) Input Power Pin (dBm) 10 Data Sheet PU10206EJ01V0DS PC8182TB 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE -60 -50 -40 -30 VCC = 2.7 V -20 -10 0 -15 -10 -5 +5 +10 f1 = 900 MHz f2 = 902 MHz VCC = 3.3 V VCC = 3.0 V +15 +10 Output Power Pout (dBm) VCC = 3.0 V f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz +5 0 -5 -10 -15 -20 -25 -50 -40 -30 -20 -10 0 +10 3rd Order Intermoduration Distortion IM3 (dBc) OUTPUT POWER vs. INPUT POWER 0 Input Power Pin (dBm) Output Power of Each Tone PO(each) (dBm) 3rd Order Intermoduration Distortion IM3 (dBc) -60 -50 -40 -30 VCC = 3.0 V -20 -10 0 -15 -10 -5 VCC = 2.7 V 3rd Order Intermoduration Distortion IM3 (dBc) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE f1 = 1 900 MHz f2 = 1 902 MHz VCC = 3.3 V 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE -60 -50 -40 -30 VCC = 2.7 V -20 -10 0 -15 -10 -5 +5 +10 f1 = 2 400 MHz f2 = 2 402 MHz VCC = 3.3 V VCC = 3.0 V 0 +5 +10 0 Output Power of Each Tone PO(each) (dBm) Output Power of Each Tone PO(each) (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10206EJ01V0DS 11 PC8182TB SMITH CHART (VCC = Vout = 3.0 V) S11-FREQUENCY 0.1 G 3.0 G 1.0 G S22-FREQUENCY 0.1 G 1.0 G 3.0 G 12 Data Sheet PU10206EJ01V0DS PC8182TB S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.csd-nec.com/ Data Sheet PU10206EJ01V0DS 13 PC8182TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.10.1 1.250.1 2.00.2 1.3 0.65 0.65 0.1 MIN. 0.90.1 0.7 14 Data Sheet PU10206EJ01V0DS 0 to 0.1 0.15+0.1 -0.05 0.2+0.1 -0.05 PC8182TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC pin. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (package surface temperature) Time at temperature of 200C or higher Preheating time at 120 to 150C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2%(Wt.) or below : 215C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260C or below : 10 seconds or less : 120C or below : 1 time : 0.2%(Wt.) or below : 350C or below : 3 seconds or less : 0.2%(Wt.) or below Condition Symbol IR260 For soldering VPS VP215 Wave Soldering WS260 Partial Heating HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10206EJ01V0DS 15 PC8182TB * The information in this document is current as of December 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 16 Data Sheet PU10206EJ01V0DS PC8182TB Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918 0209 |
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